High density spin torque three dimensional (3D) memory arrays addressed with microwave current

ABSTRACT

One embodiment of the present invention includes a three dimensional memory array having a plurality of memory elements coupled to form the array through a single top lead and a single bottom lead, each memory element including a magnetic free layer in which non-volatile data can be stored, wherein each memory element possesses unique resonant frequencies associated with each digital memory state, thereby enabling frequency addressing during parallel write and read operations, each memory element further including a fixed layer and a spacer formed between the free layer and the fixed layer.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a divisional application of and claims priority toU.S. patent application Ser. No. 11/642,277, filed on Dec. 19, 2006 byLiesl Folks et al. and entitled “High Density Spin Torque ThreeDimensional (3D) Memory Arrays Addressed With Microwave Current”.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates generally to the field of high densitymulti-dimensional nonvolatile memory arrays and particularly tomulti-dimensional memory arrays made of frequency-addressable spintransfer torque (STT) memory elements, each including at least one freelayer, wherein each memory element has a different resonant frequency,due to the shape and material of the memory element, thereby creatinglarge nonvolatile memory arrays.

2. Description of the Prior Art

High density nonvolatile memory devices, based on flash technology, havebecome increasingly popular for use in many and diverse applications,computing being one of them.

However, such technology is approaching practical limits for higherareal densities due to lithographic constraints. The criticallithographic dimension F is currently around 45 nanometers (nm) forflash technology, and is projected to decrease by around 20% per annumin the near future, although reducing the size of F beyond factor ofapproximately two will be very difficult. The corresponding bit size isapproaching 4 F² for single-bit-per-cell flash memory, and 2 F² fordouble-bit-per-cell flash memory. While multiple bits may in principlebe stored in a single cell, which increases areal density, this hasproved impractical beyond 2 bits/cell because signal-to-noise ratios arereduced due the presence of multiple, closely spaced, levels in onememory cell.

Alternative storage devices, comprising single-bit-per-cell multi-layerarrangements of storage elements, have been demonstrated, for example byMatrix Semiconductor, Inc. of Santa Clara, Calif. To date, suchmulti-layer storage devices have allowed only write-once orone-time-write operation, and have not allowed multiple write operationsto memory. New materials for re-writable memory are a topic of currentresearch and require new inventions to be integrated into multilayerdevices with large storage capacities.

One class of solid state memory devices, or nonvolatile memory, isMagnetic Random Access Memory (MRAM). MRAM devices are based on magneticmaterials. MRAM devices comprise cells or elements having a magneticallyhard layer (the “pinned” or “fixed” layer) and a magnetically soft layer(the “free” layer). Writing to MRAM is performed by passing currentthrough current leads that are formed on either side of each memoryelement in order to create a local induced magnetic field which sets thedirection of the soft layer magnetization. Significant problems havebeen encountered however in scaling these devices to high densities. Inparticular, disturbances to neighboring cells or elements can occurduring writing, sometimes causing a neighboring cell to be erroneouslywritten.

Spin Transfer Torque (STT) devices are similar to MRAM devices exceptthat the current paths pass through the magnetic layers of each memoryelement, rather than to the side of each memory element, and the softlayer of the memory element is set via the transfer of spin torque fromthe spin polarized current passing through that layer. However, thisapproach requires rather high current densities, which are undesirabledue to heat and power consumption concerns. In addition, this approachis difficult to scale to high areal densities using a multilevelarchitecture approach, as this would require cells with multiple freelayers and it would be generally difficult to switch each layerindependently with only a spin polarized direct current.

In light of the foregoing, there is a need for a high densitythree-dimensional nonvolatile memory array, which incorporates multiplelayers of memory elements, where each memory element can be switchedindependently.

SUMMARY OF THE INVENTION

Briefly, in one embodiment of the present invention, a two-dimensional(2-D) nonvolatile memory array is disclosed to include a plurality ofnonvolatile memory elements coupled to form the array, through a singletop lead and a single bottom lead, each memory element including a fixedlayer and a free layer, separated by a spacer, wherein the direction ofmagnetization of the free layer relative to the fixed layer determinesthe state of the memory element, and wherein each memory element may befrequency addressed for reading and writing based on a unique resonantfrequency.

In another embodiment of the present invention, a three-dimensional(3-D) nonvolatile memory array is disclosed to include a plurality ofnonvolatile memory elements, arranged in stacks, each stack having adifferent shape anisotropy than the other stacks, the plurality ofmemory elements further arranged in layers with each layer having a freelayer material with different magnetocrystalline anisotropy (MCA) thanthe other layers, such that each memory element is selectable based on aunique free layer resonant frequency.

The foregoing and other objects, features and advantages of theinvention will become apparent after reading the following detaileddescription of the preferred embodiments, which is illustrated in theseveral figures of the drawing.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1( a) shows a CPP device 10 including a top lead 12 and a bottomlead 14 for connecting therethrough to the device 10 and being a part ofa pillar (or nonvolatile memory element) 16 made of a free layer 18 thatis separated from a fixed layer 20 by a spacer 22, in accordance with anembodiment of the present invention.

FIG. 1( b) shows a graph 30, of Resistance (R) 34, in Ohms, shown in thevertical direction (y-axis) of the memory element 16 vs. the magneticfield 32 (H), in kOe units, shown in the horizontal direction (x-axis),as applied to the memory element 16.

FIG. 1( c) shows a graph 50, of (R) 34, in Ohms, in the verticaldirection (y-axis) vs. current 52 (I_(B)), in milli Ampere units, in thehorizontal direction (x-axis), as applied to the memory element 16.

FIGS. 2( a)-(c) show alternative embodiments of the memory element 16 ofFIG. 1( a) with different directions of magnetization in the free layer18 and the fixed layer 20 in each embodiment.

FIG. 3( a) shows a two dimensional (2-D) planar nonvolatile memory array80 with a plurality of memory elements 16, shown in one horizontal planeand in accordance with an embodiment of the present invention.

FIG. 3( b) shows a 2-D multi-bit-per-cell device (or nonvolatile memoryarray) 90 with two stacked free layers 92 and 94 of a plurality ofmemory elements 96 and 98, in accordance with another embodiment of thepresent invention.

FIG. 4( a) shows a 3-D memory array 120 of nonvolatile memory elements122 in accordance with yet another embodiment of the present invention.

FIG. 4( b) shows the array 120 of FIG. 4( a) further developed to have apolarization layer 150 formed on top of the stacks of memory elements,on top of which is formed a top current lead 152 and a bottom currentlead 154 is formed below the stacks of memory elements.

FIG. 5( a) shows the result of a torque being exerted on themagnetization (M) of the free layer of a memory element, such as thememory element 16 of FIG. 1( a).

FIG. 5( b) shows a memory element 176, similar to that of FIG. 5( a),except that the direction of magnetization is 178 is opposite to that ofFIG. 5( a).

FIGS. 6( a) and 6(b) show block diagrams of the steps performed inwriting to and reading from, respectively, a memory element, such as thememory element 16 of FIG. 1( a), in accordance with methods of thepresent invention.

FIG. 7( a) shows the timing diagram of some of the signals generated andused during the write operation of FIG. 6( a).

FIG. 7( b) shows the timing diagram of some of the signals generated andused during the read operation of FIG. 6( b).

FIG. 8 shows the initial states and resulting or final states of thefree layers and fixed layers of five memory elements, such as the memoryelement 16, of FIG. 1( a) in accordance with an embodiment of thepresent invention.

FIG. 9 shows the steps discussed relative to a read operation and toFIG. 7( b) pictorially with the free and fixed layers of memory elements1-5 shown during a read operation, in accordance with an embodiment ofthe present invention.

FIG. 10 shows exemplary states of the top of the free layer of a memoryelements of the present invention relative to the state of the fixedlayer, wherein the free layer can store four states or two bits, ofdigital information.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

In the embodiments of the present invention, shown and/or discussedherein, a memory structure is achieved that is designed with a simplematerials set and delivers improved bit packing densities and thereforehigher capacities for a given form factor. In one embodiment, a threedimensional (3-D) memory arrangement (structure or array) is presentedcomprising multiple memory (or storage) elements removing the need forindividual write and read lines to be attached to each memory element ofthe array, accordingly, offering economies in manufacturing and indevice size. A “device” as used herein includes one or more memoryelements.

A high density nonvolatile memory structure is disclosed having multiplelayers of non-volatile memory elements, each layer having been createdwith a different intrinsic magnetocrystalline anisotropy, the layers ofmemory elements being patterned into stacks of memory elements, each ofthe stacks possessing a different aspect ratio and thus a differentshape anisotropy allowing for large arrays of memory elements, each witha unique resonant frequency and thus no need for individual wires toeach layer or memory element.

By way of background, each memory element, depending on its totalanisotropy, for example, determined by MCA and shape anisotropy, amongother factors, has a characteristic frequency at which it willoscillate, if disturbed with suitable spin polarized current, and thisfrequency is referred to as the resonant frequency. Each magnetizationstate of each memory element has a separate resonant frequency. If analternating current at the resonant frequency is applied to the memoryelement, an advantageously lower direct current, perhaps zero, isrequired in conjunction to write the memory element or to change thedirection of its magnetization. Thus, the required critical current islower than that currently used by prior art nonvolatile memory. In anarray of memory elements, if a resonant frequency is applied to theentire array, as in the embodiments of the present invention, only thememory element with a matching resonant frequency would be excited (orselected). The application of current to the entire array would onlyrequire two current leads thereby eliminating the need for unique pairsof wires to each memory cell, which as earlier noted is one of thelimitations experienced by prior art nonvolatile memory.

Thus, in the embodiments of the present invention, high speedcurrent-induced (“spin-torque”) switching of individual nanomagneticelements is effectuated and electrical measurements of the associatedmicrowave oscillations are made. The microwave oscillation frequency isa function of the memory element size, shape, anisotropy, damping andthe like. Accordingly, the resonant or oscillation frequency (f₀) isselected by appropriate materials engineering and lithographicprocessing. These frequencies are measured following the application ofa DC current to the memory element, as will become apparent. Therefore,a combination of microwave field or current at the device resonantfrequency and a small DC bias field or current is used. The memoryelement is read either by measuring resistance with a DC current or bymeasuring the resonant frequency, such as described in publicationsentitled “Microwave Oscillations Of A Nanomagnet Driven By ASpin-Polarized Current,” S. I. Kiselev et al., Nature 425 (2003)380-383, and “Time-Domain Measurements Of Nanomagnet Dynamics Driven BySpin-Transfer Torques,” I. N. Krivorotov et al., Science 307 (2005)228-231.

Thus, high bit packing density using layered memory elements, each ofwhich possess different microwave oscillation frequencies because eachhas been designed with a different magnetic anisotropy, is achieved.Moreover, in one embodiment of the present invention, these layers ofmemory elements are patterned into stacks of memory elements each ofwhich possesses a different aspect ratio and thus a different shapeanisotropy allowing for large arrays of memory elements, each withunique resonant frequencies. In this manner, large arrays of memoryelements, each with unique resonant frequencies, are fabricated. As anexample, in the simplest case, the antiparallel, which may be a logical“0”, state and the parallel, which may be a logical “1”, state each havea different resonant frequency, thus there would be two resonantfrequencies for each element.

Referring now to FIG. 1( a), a current-perpendicular-to-plane (CPP)device 10 is shown to include a top lead 12 and a bottom lead 14 usedfor establishing connection with the device 10 which further includes apillar (or nonvolatile memory element) 16, in accordance with anembodiment of the present invention. In one embodiment, the memoryelement 16, which is a nonvolatile memory element, is made of a magneticfree layer 18 that is separated from a magnetic fixed layer 20 by anon-magnetic spacer 22. In one embodiment, the memory element 16 is aspin transfer torque (STT) memory element. In FIG. 1( a), the free layer18 and the fixed layer 20 have in-plane anisotropy, i.e. parallel to theplane, as shown by the direction of the bold-set arrows.

In FIG. 1( a), examples of material used as the free layer 18 are 22 Åof Co₅₀Fe₅₀ or the bilayer structure 6 Å Co₅₀Fe₅₀/35 Å Ni₈₀Fe₂₀. Anexample of the materials used to form a fixed layer 20 which minimizesdemagnetizing field effects is made of the following thickness andmaterial composite: 25 Å Co₅₀Fe₅₀/8 Å Ru/25 Å Co₅₀Fe₅₀. An example ofmaterial used as the spacer 22 is of the thickness and material 40 Å Cu.

In another embodiment of the present invention, the free and fixedlayers could have perpendicular anisotropy and in yet anotherembodiment, their anisotropy axes could be at some angle to each other,both of which embodiments are discussed and shown in subsequent figuresand discussions below.

In FIG. 1( a), the direction of current, represented by the arrow 26, isperpendicular to the film plane. The shape of the device 10 is generallylithographically defined. Examples of current lithography techniques arephotolithography, deep ultra-violet, electron beam, and others. Theleads 12 and 14 are used for applying current thereto to invoke thestorage (programming of or writing to) or read-back of data (or bit ofinformation) stored in the memory element 16. In one embodiment, theeasy anisotropy axis is perpendicular to the film plane as this leads toa smaller required critical write current. High bit packing density (andthus high device capacity) is achieved through layering memory elements,such as the memory element 16, each of which possesses differentresonant microwave oscillation frequencies because each layer has beendesigned with a different total magnetic anisotropy.

The pillar 16 is interchangeably referred to as a “spin transfer torque(STT) memory element” 16 capable of storing information in binaryformat.

FIG. 1( b) shows a graph 30, of Resistance (R) 34, in Ohms, shown in thevertical direction (y-axis) of the memory element 16 vs. the magneticfield 32 (H), in kilo Oersted (Oe) units, shown in the horizontaldirection (x-axis), as applied to the memory element 16. The graph 30shows the relationship between the resistance of the pillar 16 of FIG.1( a) and the relative directions of magnetization of the free layer 18and the fixed layer 20. Stated differently, the direction ofmagnetization of the free layer 18 vs. the fixed layer 20 is parallel oranti-parallel depending on the history of the applied magnetic field.For example, at 36, the direction of the magnetization of the free layer18 is parallel to the direction of magnetization of the fixed layer 20,whereas, at 38, the direction of the magnetization of the free layer 18is anti-parallel to the direction of magnetization of the fixed layer20. When increasing the field from large negative fields, the free layerreverses, whereas when decreasing the field from large positive fields,the free layer reverses.

Starting from 36, the direction of magnetization of the free layer 18 isin a parallel direction relative to that of the fixed layer 20 and then,the direction of magnetization of the free layer 16 switches toanti-parallel relative to that of the fixed layer 20 and then upondecreasing the applied field, the direction of magnetization of the freelayer 18 switches back to parallel relative to that of the fixed layer20. Thus, the graph 30 essentially shows field-induced reversal of thedirection of magnetization of the free layer 16 resulting from theapplication of a magnetic field (H) and observed by measuring the changein resistance (R) of the device as the direction of magnetization of thefree layer 18 switches from parallel to anti-parallel and visa versarelative to that of the fixed layer 20. When the direction ofmagnetization of the free layer 18 is anti-parallel, resistance (R)increases relative to when the direction of the free layer 18 isparallel to that of the fixed layer 20.

Stated differently, there are two stable magnetic states, those with themagnetization of the free layer 20 and the fixed layer 18 alignedparallel and anti-parallel. In one example, the parallel alignmentrepresents a logical ‘1’ state and the anti-parallel alignmentrepresents a logical ‘0’ state.

FIG. 1( c) shows a graph 50, of Resistance (R) 54, in Ohms, in thevertical direction (y-axis) vs. current 52 (I_(B)), in milli Ampereunits, in the horizontal direction (x-axis), as applied to the memoryelement 16, of the memory element 16. The graph 50 representscurrent-induced reversal of the direction of magnetization of the freelayer 18 when current (I_(B)) is applied to the memory element 16 andthe change in magnetization is observed by measuring the change inresistance (R) of the device as the direction of magnetization of thefree layer 18 switches from parallel to anti-parallel and visa versarelative to that of the fixed layer 20. In this connection, 60 and 62,in FIG. 1( c) show the resistances associated with the parallel andanti-parallel directions of magnetization of the free layer 18 relativeto the fixed layer 20, whereas, 56 and 58, in FIG. 1( c) show thecurrents required to reverse the direction of magnetization of the freelayer 18 relative to that of the fixed layer 20.

An understanding of the memory element 16 is vital because the rest ofthis document discloses embodiments and methods of fabrication and useof memory arrays built from the memory element 16 by, for example,stacking and/or placing side-by-side, in a horizontal plane, a pluralityof the memory element 16 to build a large memory array (or high densitymemory elements).

FIGS. 2( a)-(c) show alternative embodiments of the memory element 16 ofFIG. 1( a) with different directions of magnetization in the free layer18 and the fixed layer 20 in each embodiment. In FIG. 2( a), the freelayer 18 and the fixed layer 20 have perpendicular anisotropy and thedirection of magnetization is perpendicular to the plane, which is apreferred direction due to lower current requirements for switchingrelative to an in-plane anisotropy, such as shown in FIG. 1( a).

Depending on the direction of the bold arrows, i.e. the free layer 18has magnetization pointing up (parallel to the y-axis) or pointing down(parallel to the y-axis), a logical or binary ‘1’ or ‘0’ is stored orwritten to the memory element 16. That is, the magnetization of the freelayer 18 determines the state of stored bit. For example, in the case ofan out-of-plane anisotropy device, if the direction of magnetization ofthe free layer 18 matches that of the fixed layer 20, this may indicatea binary state ‘1’, whereas if the direction is opposite to that of thefixed layer 20, this may indicate a binary state ‘0’ or vice versa.

In FIG. 2( c), while the direction of magnetization in the fixed layer20 is parallel to the plane, the direction of magnetization in the freelayer 18 is perpendicular to the plane. In FIG. 2( b), the direction ofmagnetization of the fixed layer is at a predetermined angle to normal.

FIG. 3( a) shows a two dimensional (2-D) planar nonvolatile memory array80 with a plurality of memory elements 16, shown in one horizontal planeand in accordance with an embodiment of the present invention. Thememory elements 16 are each shown to include a spacer 13. The 2-D array80 of FIG. 3( a) allows for multiple memory elements comprising free andfixed layer couples to be added to a row with all memory elementsconnected to the leads 12 and 14. While there are five memory elements16 shown in FIG. 3( a), any number of memory elements may be employed.In FIG. 3( a), the array 80 is a single-bit-per-cell configuration (acell being the same as a memory element) where one cell can assume oneof two states, i.e. ‘0’ and ‘1’. The leads 12 and 14 provide a simplelead structure allowing for parallel read and write operations of and toall of the memory devices 16 to which the leads are connected. Currenttravels in a direction indicated by the arrow 82 or the reverse. Eachfree layer 18 of a memory element 16 has two unique resonant frequencies(f₀), associated with parallel and antiparallel fixed and free layers,designed by control of total magnetic anisotropy, i.e. using lithographyto control shape anisotropy and/or by control of magnetocrystallineanisotropy using materials engineering. Accordingly, each memory elementin the array can be written and read individually using frequency-spaceaddressing.

As is apparent in FIG. 3( a) and additional embodiments of the presentinvention, herein, individual pairs of write and read lines to eachelement, used in conventional non-volatile memory are eliminated.

FIG. 3( b) shows a multi-bit-per-cell device (or nonvolatile memoryarray) 90 with two stacked free layers 92 and 94 of a plurality ofmemory elements 96 and 98, in accordance with another embodiment of thepresent invention. The embodiment of FIG. 3( b) shows the in-planeanisotropy case with a plurality of memory elements, having more thanone free layer, namely two, as shown in the figure, in the same stack.It should be noted that while the device 90 is shown to comprise twomemory elements, other numbers of memory elements are contemplated.

More specifically regarding the device 90, there is shown a top lead 109and a bottom lead 110 and therebetween are shown two memory elements 96and 98, separated by a spacer 108. The memory element 96 is shown atopof the spacer 108 and further shown to include a free layer 92, which isdirectly formed on top of the spacer 108 and onto which a spacer 104 isformed. On top of the spacer 104 is formed a fixed (or pinned) layer100. On top of the lead 110 is formed the memory element 98, whichincludes a fixed layer 102, a spacer 106 and a free layer 94. The fixedlayer 102 is shown formed on top of the lead 110 and on top thereof isshown formed the spacer 106 and on top of the latter is shown formed thefree layer 94. Because there are two free layers in the device 90 andeach can take on a different direction of magnetization relative to thefixed layer of its corresponding memory element, four states or a twodigit binary number can be stored in the device 90. The arrows 114 and116 are shown as being dashed to indicate the two possibilities of thedirection of magnetization for each of the free layers 92 and 94.

Stated differently, due to the stacking of the free layers, multiplebits, in particular two bits, are achieved. That is, two free layerswill effectuate four binary states (00, 01, 10 and 11) because each freelayer has two distinct easy magnetization directions, and these can beindependently written and read in frequency space by virtue of eachhaving a unique resonant frequency (f₀), designed either by control ofshape anisotropy, using lithography as an example, and/or by control ofmagnetocrystalline anisotropy, such as using materials engineering. Toprovide a practical example, if the direction of the free layer 92matched that shown, in FIG. 3( b), of the fixed layer 100, there wouldbe a unique state represented, such as ‘0’ and if the direction does notmatch, an opposite state might be represented, such as ‘1’. Coupling theforegoing with the unique states represented in a similar manner withreference to the memory element 98, there are altogether 4 states or twobits of information that may be stored within the device 90 due to the2-memory element stacking thereof. The four states are noted on theright side of FIG. 3( b), as states 1-4 with each state showing thedirection of magnetization of each of the two corresponding free layers92 and 94. As earlier noted, there may be additional states or bits ofinformation stored in the device 90 in the presence of additionalstacked memory elements.

In an alternative embodiment, the layers of FIG. 3( b) may be formed indifferent order. For example, the fixed layer 102 may be formed on topthe spacer 106, which may be formed on top of free layer 94 to formmemory element 98. In a further alternative embodiment, the device 90may include only one pinned (or fixed layer), such as the pinned layer100 with the free layers 92 and 94 present, as described. In this case,the magnetic states of the free layers 92 and 94 are determined withreference to the magnetic state of the pinned layer 100. Moreover,additional free layers than those shown in FIG. 3( b) may be formed thuscreating additional storage capacity. In this case, not every memoryelement will include a fixer layer.

FIG. 4( a) shows a 3-D nonvolatile memory array 120 made of nonvolatilememory elements 122 in accordance with yet another embodiment of thepresent invention. As will be appreciated, the 3-D structure is createdby using varying magnetocrystalline anisotropy (MCA) in one dimension,and varying shape anisotropy in another dimension, with the net resultof such varying anisotropies summing so that each memory elementexhibits a different or unique total anisotropy and thus a different orunique resonant frequency (f₀) for each memory state. In the embodimentof FIG. 4( a), each plane of memory elements 122 has the same MCA,determined by the thin magnetic film structure for that layer. Forexample, in FIG. 4( a), 10 layers with varying MCA are shown in anupwardly direction by the arrow 124 (the lighter and darker shading ofeach of the memory elements of the different layers are shown toemphasize the varying MCA of the layers) and 10 stacks of memoryelements 122 of differing shapes are shown horizontally by the arrow 126(the different sizes of each of the memory elements of the differentstacks are shown to further emphasize the shape anisotropy). Each stackof memory elements 122 has the same shape anisotropy designed by, forexample, lithography. In the FIG. 4( a), there are 10×10 or 100 memoryelements 122 depicted.

The array 120 includes 100 variations of shape and material of memoryelements. That is, due to the presence of 10 layers and 10 stacks ofmemory elements, there are 100 memory elements, each distinguished byits shape and material and thus each having a unique resonant frequencyfor each magnetic state. To write a memory element from the array 120,in the presence of an alternating signal of unique frequency for thatmemory element, a lower current density is required than that of priorart for reversing the direction of magnetization.

The size of the array 120 depends on the number of shapes that can bemanufactured, which is, at least in part, dependent on lithographicdimension limitations. Thus, as lithographic dimensions reduce, thenumber of memory elements in an array can increase because the elementscan be formed closer together. Further, a large array of memory elementsis fabricated with reasonable manufacturing costs and practicaloperations.

An exploded view of one of the memory elements 122 appears on theright-hand side of FIG. 4( a) wherein the memory element 122 is shown toinclude a fixed layer 142 on top of which is formed a spacer 140 on topof which is formed a free layer 138 with its magnetization directionparallel or anti-parallel to that of the fixed layer 142. The directionof current 144 is shown to be down.

To provide a practical example, while all of the memory elements of thestack 128 have the same shape anisotropy, all of the memory elements ofthe stack 128 have different shape anisotropy than the memory elementsof the remaining nine stacks, including the stacks 130 and 132.Similarly, while all of the memory elements 122 of the layer 134 havethe same MCA, the memory elements of the layer 134 have a different MCAthan the memory elements of the remaining nine layers, including thelayer 136. This results in each of the memory elements 122 of FIG. 4( a)having a unique resonant frequency for each magnetic state.

Thus, during a write operation, as will be shortly discussed, analternating current (AC) corresponding to the resonant frequency of adesired state of a desired memory element, i.e. one to be writtenthereto, is applied. The alternating write current may be applied to thememory element or array of memory elements in conjunction with a directcurrent which may serve to lower the total energy required to switch theelement to be written. That is, a direct current (DC) waveform may beapplied to the memory element or array of memory elements eitherimmediately before, during or immediately after the application of thealternating current which is frequency matched to the element which isto be written.

During a read operation, a DC current is applied which is large enoughto excite all of the memory elements but not large enough to switch(magnetically reverse) any of them. Then, in response to the applied DCcurrent, the memory elements each generate a radiofrequency (RF)waveform, which includes frequency information indicating whether thememory element is in a parallel or anti-parallel state.

An alternatively topography as previously discussed may be a differentorder of formation of layers, such as the free layer 138 on top of whichis formed the spacer 140 on top of which is formed the fixed layer 142.In FIG. 4( a), yet another embodiment includes fewer fixed layers thanthere are free layers which would simplify processing withoutcompromising functionality. The state of each memory element would bedetermined with respect to a nearby fixed layer.

In another embodiment, a single fixed layer in a stack of multiple freelayers is described. FIG. 4( b) shows the array 120 of FIG. 4( a)further developed to have a fixed layer 150 formed on top of the stacksof memory elements, on top of which is formed a top current lead 152 andbelow which is formed a bottom current lead 154 is formed. Each of thememory elements 122 is separated from the other by a conducting spacer156. The current is applied to the lead 152 and follows a path shown bythe arrow and lines of 158. As previously noted, the order of formationof layers may be different and as an example, a free layer 150 may bebelow the stacks of memory elements.

In one embodiment, the fixed layer 150 (also known as a hard layer or apolarizing layer) is made of permanently magnetized magnetic material,well known to those of ordinary skill in the art, such as theantiparallel composite material 25 Å Co₅₀Fe₅₀/8 Å Ru/25 Å Co₅₀Fe₅₀. Itis permanently magnetized such that it always polarizes the electronscoming through the device in one direction.

While it may be possible to operate the array 120 with a single fixedlayer 150, as shown in FIG. 4( b), it may be necessary to have more thanone fixed layer within each stack of memory elements, or to have onefixed layer for every memory element. The stacks are separated from eachother by an electrically insulating material, such as Al₂O₃, and thememory elements in each stack are separated from each other by aconductive spacer layer, for example made of Cu or Ru.

Care must be taken in choosing materials for the manufacturing of thememory elements of the memory array, and in lithographic patterning ofthose same elements, to ensure that the resonant frequencies of each ofthe memory elements are far enough apart so as to eliminate undesirableexcitation or selection of incorrect memory elements.

FIG. 5( a) shows the result of a spin transfer torque being exerted onthe magnetization (M) of the free layer of a memory element, such as thememory element 16 of the foregoing figures. In FIG. 5( a), at 174, aspin polarized current of magnitude suitable for a read operation of thefree layer 172 of a memory element is applied at 170, which causes atorque to be exerted on the magnetization M of the free layer 172causing it to precess around the easy axis of magnetization, i.e. thelowest energy state. That is, a signal is produced, as a result of themagnetization (M), represented by the arrow 180 and the dashed arrowstherearound, precessing a resonant frequency (f₀) related to the totalanisotropy of the free layer 172.

As shown in the graph 176, if the signal power of the free layer 172 ismeasured at the resonant frequency (f₀) 178, a peak 182 is detected. Thedirection of magnetization of the free layer 172 is shown by the arrow180 and the magnetization M precesses about the axis of the arrow 180.The areal current density related to the current used for spinprecession must be low enough so as avoid reversing the free layermagnetization and also avoid melting the free layer 174 through Ohmicheating. In an exemplary embodiment, the upper limit of this currentdensity is 10⁹ A/cm².

FIG. 5( b) shows a memory element 176, similar to that of FIG. 5( a),except that the direction of magnetization is 178 is opposite to that ofFIG. 5( a), as measured relative to the direction of the magnetizationof a nearby fixed layer. For this reason, the peak 180 of the signalpower is at a different resonant frequency (f′₀).

FIGS. 6( a) and 6(b) show block diagrams of the steps performed inwriting to and reading from, respectively, a nonvolatile memory element,such as the memory element 16 of the foregoing figures, in accordancewith methods of the present invention. With reference to FIG. 6( a), alocation signal 190 representing the location to which a value is to bewritten in memory is provided to a look-up-table (LUT) block 192. Theoutput of block 192 is a frequency corresponding to or matching theresonant frequency of the memory element to which data will be written.Thus, the block 192 is a table of stored information correlatinglocations to frequencies and vice versa. The output of the block 192 isprovided to the AC wavetrain block 194, which essentially provides an ACsignal having the desired resonant frequency or the frequency providedby the block 192.

The alternating current (AC) signal (or current), from the block 194, isadded to a DC signal from the DC current block 198, by the Bias T unit196, which provides an input to the array of memory cells 200 and the ACexcites the memory element which is intended to be written thereto. Itis the AC signal that determines which memory element is selected oraddressed for writing thereto because it carries the frequency resonantto the memory element to be written thereto. When the AC is provided toan entire stack of memory elements through the top or bottom leads, theneed for many wires is eliminated by virtue of frequency addressing,described herein, which simplifies device architecture over that ofprior art.

The direct current (DC) (or DC signal) of the block 198 may be used toprogram the desired memory element. The foregoing DC signal may beapplied through the top lead and bottom lead of an array of memoryelements. This applies as well to the application of DC during a readoperation. Alternatively, a combination of DC and AC is used with the ACbeing one or more AC pulses added into a DC pulse to form a wave train.Still alternatively, AC pulses with no DC may be employed for read andwrite operations.

An array made of memory elements of the present invention may be writtento in parallel or serially. When writing to an array of memory elements,in parallel, a current wave train is applied to the memory elementscomprising a DC component and a selection of AC components, thefrequencies of which are matched to the microwave oscillationfrequencies of the specific memory states of the specific memoryelements which are to be written.

Addressing or selecting a memory element based on the resonant frequencyassociated therewith and that is unique to each memory element isreferred to as frequency addressing.

When writing serially, a DC component and an AC component are appliedwhich match the microwave oscillation frequency of a single memoryelement which is being written thereto.

In FIG. 6( b), when reading, a DC current is applied to the entire arrayof memory elements (to the array of memory cells 208), at the step 204.An amplification or pre-amplification is performed at step 209 on thesignal from the array of memory cells 208 and prior to the frequencydiscrimination circuit 210, which operates thereon. The applied DCexcites all of the memory elements so that the frequency discriminationcircuit at step 210 can then determine which free layers are in whichmagnetization state and this information is represented by variousvoltage levels, on the signal 212, corresponding to various resonantfrequencies, which is provided to the LUT block 214 and the output ofthe LUT block 214 generates memory state information.

Location information includes the address of the memory location whereinformation is desired to be read therefrom. V_(n) is high/low dependingon the whether the corresponding f_(n) is present in the wave train. TheLUT of the block 214 correlates V_(n) to a anti-parallel/parallelconfiguration of a specific memory element or cell. The blocks 192 and214 are essentially the same blocks wherein during a write operation,the LUT is provided with location information and provides correspondingfrequency information and during a read operation, the LUT is providedwith frequency information and provides corresponding locationinformation. The level of the DC is generally lower, during the readoperation, relative to the DC of the write operation.

FIG. 7( a) shows the timing diagram of some of the signals generated andused during the write operation of FIG. 6( a). For example, the DCsignal 220 is the output of the block 198 of FIG. 6( a), the AC wavetrain signal 222 is the output of the 194 of FIG. 6( a) and the Bias Toutput signal 224 is the output of the Bias T 196 of FIG. 6( a). FIG. 7(b) shows the timing diagram of some of the signals generated and usedduring the read operation of FIG. 6( b). For example, the DC signal 226is the output of the block 204 of FIG. 6( b), the output wave trainsignal 228 is the output of the block 208 of FIG. 6( b) and the voltagesignal 230 is the output of the circuit 210 of FIG. 6( b), whichcorresponds to resonant frequencies, as earlier noted.

FIG. 8 shows the initial states and resulting or final states of thefree layers and fixed layers of five memory elements, such as the memoryelement 16, of FIG. 1( a) of the foregoing figures. The initial statesof all of the five memory states, prior to programming or writingthereto are in logical state ‘1’ with magnetization states of directionsthereof of the free layers and fixed layers all pointing in the samedirection (they are parallel). During the write operation, when thesignal 224 (of FIG. 7( a)), having the waveform shown in FIG. 8 andincluding frequencies f₂ and f₄ corresponding to memory elements 2 and4, is applied, the states of memory elements 2 and 4 are changed tological state ‘0’ where the free layer magnetization is reversed to adirection opposite to that of the fixed layer of the same memory element(they are anti-parallel). This is due to the waveform 224 havingfrequencies matching the resonant frequencies of the memory elementsbeing written thereto.

Prior to writing data to the device, the LUT would need to beinitialized with the resonant frequencies of all the memory elements.This could be done, for example, by placing the device in a largemagnetic field so as to set the direction of all the layers to beparallel to the field. The field could then be set to zero. A DC wouldbe applied so as to measure the resonant frequencies of all devices inthe parallel state. The field would then be slowly increased in thereverse direction while monitoring the ac waveform output. As the fieldincreases, the first free layer will reverse, and one of the frequenciesin the wave form will vanish and a new frequency will appear. This thenidentifies the two frequencies of device at location 1, and those arestored in the LUT. The field is the increased further, and each freelayer will then reverse in succession, identifying the frequencies ofeach free layer, and thus populating the entire LUT.

FIG. 9 shows the steps discussed relative to a read operation and toFIG. 7( b) pictorially with the free and fixed layers of memory elements1-5 shown during a read operation, in accordance with an embodiment ofthe present invention. In FIG. 9, the signal 226 (of FIG. 7( b)) isapplied to all of the memory elements 1-5 thereby exciting all of them.An AC waveform or signal, such as the signal 228, is generated from thememory elements, corresponding to the directions of magnetizationthereof. That is, the waveform (or wave train) of the signal 228includes the frequencies f_(n) which are the resonant frequencies of thememory element states. This information is used to generate thevoltages, Vn, used by the LUT block 214, of FIG. 6( b), to correlatewith an AP/P configuration of a specific cell or memory element. Thus,in FIG. 9, the state ‘1’ of the memory element 1 is read as being in theP, or parallel, configuration, whereas, the state ‘0’ of memory element2 is read as being in the AP, or anti-parallel, configuration of thememory element 2 and so on.

FIG. 10 shows a top view of the exemplary states of a free layer of amemory elements of the present invention, relative to the state of thefixed layer, and can be used in any of the foregoing embodiments. Inthis embodiment, there are specifically four possible low energymagnetization states for the free layer that are each logical states,representing a 2-digit binary value, arising from magnetization of thefree layer having equiaxial magnetocrystalline anisotropy (i.e., havingtwo energetically equivalent easy axes of magnetization, or four-foldmagnetic symmetry). The magnetization of the fixed layer, shown at 232,by M, needs to be at a finite or predetermined angle relative to theeasy axes of the free layer to break the inherent symmetry. Accordingly,each of the four states of magnetization of the free layer, shown at234, has a unique resonant frequency, f₀.

Although the present invention has been described in terms of specificembodiments, it is anticipated that alterations and modificationsthereof will no doubt become apparent to those skilled in the art. It istherefore intended that the following claims be interpreted as coveringall such alterations and modification as fall within the true spirit andscope of the invention.

What is claimed is:
 1. A two-dimensional (2-D) planar nonvolatile memoryarray comprising: a plurality of memory elements wherein each memoryelement stores at least one bit of data and formed between a top leadand a bottom lead, through which current is applied and travels, eachmemory element including, a magnetic fixed layer formed between the topand bottom leads; a magnetic free layer formed between the top andbottom leads, wherein the free layer is substantially made of materialand thickness thereof consisting of the group: 22 .ANG. ofCo.sub.50Fe.sub.50 and the bilayer structure 6 .ANG.Co.sub.50Fe.sub.50/35 .ANG. Ni.sub.80Fe.sub.20; and a non-magneticspacer formed between the fixed and free layers.
 2. A two-dimensional(2-D) planar memory array, as recited in claim 1, wherein the fixedlayer is substantially made of material and thickness is 25 Å Co₅₀Fe₅₀/8Å Ru/25 Å Co₅₀Fe₅₀.
 3. A two-dimensional (2-D) planar memory array, asrecited in claim 1, wherein the spacer is substantially made of and hasa thickness of 40 Å Cu.
 4. A two-dimensional (2-D) planar memory array,as recited in claim 1, wherein the free and fixed layers each havein-plane anisotropy.
 5. A two-dimensional (2-D) planar memory array, asrecited in claim 1, wherein the free and fixed layers each haveperpendicular anisotropy.
 6. A two-dimensional (2-D) planar memoryarray, as recited in claim 1, wherein the fixed layer has an anisotropyat an angle at a predetermined angle the respect to that of the freelayer.
 7. A two-dimensional (2-D) planar memory array, as recited inclaim 1, wherein the memory elements of the plurality of memory elementsare spin transfer torque (STT) memory elements.
 8. A two-dimensional(2-D) planar memory array, as recited in claim 1, wherein the memoryarray is made by a lithographic process.